Samsung Electronics has proudly announced today that it is the first to begin manufacturing of 3-bit-cell (3-bit), 64 Gb (8GB) MLC (multi-level cell) NAND flash chips on 20-nm class process technology.

"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. "By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

The new 3-bit chips are set to be used within high capacity flash drives and SD memory cards, and apparently in smartphones and solid state drives too.
Source: Here